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 Home > Product > Evaporator > SRN-200i
    SRN-200i

SRN-200i
E-Beam & High Performance Ion Gun Combination

This is the Batch-Type High Vacuum E-Beam Evaporation System developed to deposit some metal ( Pt, other metal etc.) on a substrate The size of a deposition chamber is W760mm×D780mm×H1200mm. This system is suitable for production since the integrated control system on the operation panel allows the automatic pumping and deposition.

                                                                                                        

      Feature

  • Very high ion beam current supports high-rate deposition processes
  • Low energy ions minimize substrate damage
  • Broad divergent beam improves process uniformity and maximizes substrate loading
  • Hollow cathode for lower contamination and lower substrate temperature
  • Removable anode assembly enables easy and rapid maintenance without the need to uncouple water lines
  • Integrated feedthroughs and cabling provide greater simplicity and reliability
  • Available to Multi layer and co-deposition
  • Flexible to substrate size to 8”
  • Available to planetary dome
  • Precision thickness control by thickness monitor.


    Process specification

     Thickness Uniformity @ 3000Å Al, Ti Film(5mm exclusion)
       - Within W, W to W, B to B : <± 5% at 8” wafer
     Film Rs Uniformity @ 3000Å Al, Ti Film
       - Within W, W to W, B to B : <± 5% at 8” wafer
     Film Deposition Rate
       - Al : > 500Å/min
       - Ti : > 500Å/min
     uniformity on wafer surface : <± 5%
     Etching uniformity of native oxide in a wafer ±10%
     Etching uniformity of native oxide in a B to B ±5%
     Transfer particle in a wafer < 50 ea (≥ 1.0 ㎛ size)
     Etch particle in a wafer < 50 ea (≥ 1.0 ㎛ size)
     Deposition particle in a wafer < 50 ea (≥ 1.0 ㎛ size)

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