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 Home > Product > Sputter > SRN-110
    SRN-110

Cluster Sputter with Multi Target Chamber
Multi purpose sputtering system with multi target which is 7inch cathode with rotating magnetron in one chamber.

The key benefits of the SRN110 are the technical performance, flexibility and extendibility of the cathode magnetron source. This system uses automatically selected cathode alter the hardware changing in the chamber.

The design of the cathode has allowed for high ionization, which provides good directionality and film uniformity. A module also can be operated in a bias sputter mode like a etcher and a low power deposition occurs simultaneously.

New advancements have further increased step coverage, reduced asymmetry, improved non uniformity and enabled full-face erosion.

   

FEATURE

  • Outstanding target efficiency by rotating magnet cathode
  • Curtailment of maintenance cost by multi target configuration
  • Improved convenience of chamber shield exchange
  • Through target protection from mutually contamination by intelligent target shield design
  • Various purpose deposition/Co-deposition/Unlimited multi layer coating with maximum 12 target materials(Optional) without chamber open
  • Small installation space of clean room as compared with quantity of target
  • Excellent step coverage and thickness uniformity
  • Substrate table having heating and RF bias function simultaneously
  • Available to RF Cleaning, Oxide etching, Plasma sputtering at one process chamber without unloading

 

PROCESS SPECIFICATION

 Thickness Uniformity 
   - Within W, W to W, B to B : <± 5% at 8” wafer

 Film Rs Uniformity @ 1000Å Al, Ti Film 
   - Within W, W to W, B to B : <± 5% at 8” wafer

 Film Deposition Rate 
   - Al : > 1000Å/min 
   - Ti : > 1000Å/min 
   - SiO2 : > 500Å/min

 Heat uniformity on wafer surface : <± 3% 
   - In the same chamber inside

Wafer heating up to maximum 600℃
Oxide etching by RF Bias plasma

 

   - Sheet Resistance Map of Al & Ti @8 inch wafer

 

High temperature heater available to heating of 8inch wafer up to 900℃(wafer’s temp) less than 10 minute into the SRN 110, SRN 120 and 130 sputtering system.

The SHTR-900 made by SORONA is halogen lamp heater available to heating up to 900℃ of wafer’s temperature very quickly in the sputter system. Usually, It is difficult to apply to Sputter the Halogen lamp heater for heating of wafer due to non-directional of deposited molecules or system mechanism of Sputter like a susceptor rotating and a automatic loading/unloading. SORONA has solved such as problems and developed The SHTR-900 halogen heater, which is possible heating wafer’s temperature upto 900’C.

 FEATURE

  • Available to rotating of wafer
  • Wafer pin up/down
  • Max temp : 900℃(Wafer’s temperature)
  • Ramping time upto 900℃ : within 15 min
  • Stabilized time : within 5 min
  • Temp uniformity : <±3% in 8 inch wafer
  • DC current control for redundant recurrence rate(optional)

 


 

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